Samsung has begun shifting memory production to a 90nm process, even as rival DRAM maker Infineon agreed to provide Winbond with its 90nm technology.
The South Korean giant revealed last month that it has started punching out unspecified DRAM chips at 90nm. It expects three per cent of its Q3 wafer starts to be fabbed at that node, it said.
However, it emerged this week that the company is using 90nm for its DDR 2 output, according to a DigiTimes report. Samsung will initially produce 512Mb DDR 2 parts clocked at 400, 533 and 667MHz at 90nm, it was claimed.
Q4 is set to see Samung using 90nm of five per cent of its wafer starts, with mass production following in 2005.
Meanwhile, Winbond will use Infineon's 90nm process to make SDRAM and Pseudo SRAM parts, and possibly for Flash too, at a later date. It has licensed the technology for both 200mm and 300mm wafers, but is currently building a new 300mm wafer fab that is due to reach mass production in Q1 2006. It is likely to use Infineon's 90nm process.
Infineon isn't funding the plant, but Winbond with be producing some chips on the German company's behalf, it said. ®
Hynix creditors to vote on China DRAM fab plan
Japan to probe Hynix DRAM dealings
Hynix overtakes Micron in world DRAM chart
Elpida to mass-produce DDR 2 in August
Elpida boosts DRAM to SRAM speeds
Rambus offers DDR controller cores